【摘要】 本文研究了1MeV中子辐照在气相外延n-GaAs有源层中深能级缺陷的特性和热退火性能。结果表明,大多数感生缺陷是与两个以上原子位移有关的缺陷。另外,当H₁能级通火时,出现了一个新的缺陷能级E₅（E_c-0.73eV）。研究表明GaAs MESFET参数的变化主要是由于载流子去除。更多还原

【Abstract】 The characterization and thermal annealing behavior of deep-level defects in 1 MeV neutron irradiated VPE n-GaAs layers have been studied. The results indicate that the majority of induced defects are associated with displacement of two or more neighboring atoms. In addition, a new defect level E5(Ee-0.73 eV) emerges, as the H1 level anneals out, It is found that the changes of GaAs MESFET parameters are mainly due to the carrier removal.更多还原