节点文献
掺锑SnO2膜XPS和AES分析
XPS AND AES ANALYSIS ON ANTIMONY DOPED SnO2 FILMS
【摘要】 用喷涂法制备的掺锑SnO2膜,其方块电阻可达~15Ω/□,在可见光区的光透过率达85—92%。XPS和AES剖面分析表明:该膜的表面存在约15(?)的富氧区和约50(?)的富氯区,而其内部是均匀的SnO2多晶结构。
【Abstract】 The square resistance R□ of antimony doped SnO2 films prepared by means of che-mical spray reaches about 15 Ω/ □. Its light transmitance in visible range is between 85%-922%. The results from XPS and AES profile analysis show that an about 15 A oxygen-rich layer and a 50 A chlorine-rich layer exist at the surface of films, while uniform SnO2 polycrystalline structure exists inside the films.
- 【文献出处】 太阳能学报 ,Acta Energiae Solaris Sinica , 编辑部邮箱 ,1988年02期
- 【被引频次】5
- 【下载频次】86