【摘要】 本文报道了LnP（Ln=La、Nd、Sm、Y、Dy、Yb）薄膜的光电特性,其禁带宽度为1.0—1.46eV。LnP薄膜是n型材料,电阻率约10^-2Ω-cm,载流子浓度为10¹⁷—10¹⁹cm^-3,霍尔迁移率为8.5—400cm²/V·s。LnP与Si片构成p-n结,光谱响应范围在600—1400nm,光照下LnP/Si具有光伏效应。更多还原

【Abstract】 The optical, electric and photoelectric properties of the films of rare earth monopho- sphides (Lup, Ln = La, Nd, Sm, Y, Dy, Yb) have been investigated. Optical absorption and electric properties investigation showed that LnP have semiconductive property with the energy gaps of 1.0-1.46eV, and that they are all.N-type electric conduction with, the resistivity of -10-2 Ω-cm, carrier concentrations in the range of 1017-1019 cm-3 and corresponding Hall mobility of 8.5-400cm2/V.s. The films of LnP have been deposited on Si substracte in vacuum. The voltage-electric current characteristic measurement found that p-n junction had been formed between LnP and Si. Their spectrum response are in the range from 600 to 1400nm. The photovoltaic effect has been observed on LnP/ Si in incident light. They may be used for solar cell.更多还原