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有机硅化合物HMDSN的等离子体聚合
The Plasma Polymerization of Organo-Silicon Compound HMDSN
【摘要】 有机硅化合物HMDSN用高频辉光放电方法进行等离子体聚合,使用频率为5.4 M.C.;输入最大功率为100W;基片温度为150℃。在不同性质的基片上可形成透明和致密的聚合膜。聚合膜具有优良的耐磨性和化学稳定性。红外吸收光谱表明HMDSN单体和其聚合膜的结构有着明显的不同。聚合膜的红外吸光谱较之单体的吸收峰少而且平坦,表示了聚合膜的基团少。聚合度高,其网状结构较为整齐。
【Abstract】 The plasma polymerization of organo-silicon compound HMDSN is undertakenby means of the H. F. glow discharge process with the discharge frequency 5.4M.C., max. power input 100W substrate temperature 150℃. The highly transpa-rent, dense, adhesive polymerized film is formed on various substrates. It hasexcellent abrasion-resistance and chemical stability. The analysis of IR absorption spectrum shows that the structure of the PPfilm is distinctly different from that of the HMDSN monomer. In the IR ab-sorption spectrum of PP film, some absorption peats of the HMDSN monomer areabsent and some become less-steep. It implies that the PP film is highly polymer-ized and has a dense structure of regular cross-linked network with only a fewradicals.
- 【文献出处】 同济大学学报 ,Journal of Tongji University , 编辑部邮箱 ,1988年02期
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