【摘要】 用控制镉和碲分压的升华法分別生长了接近化学计量比理论值和偏离化学计量比（含有大量镉空位）的高纯碲化镉单晶。在前者样品的10K 光致发光光谱中观察到激子发射的强大谱峰,在后者发光光谱中观察到镉空位复合中心的多声子发光谱峰。用热扩散法在500～750℃范围内掺 In 得到不同 In 浓度的 CdTe 样品。霍尔测试结果表明,随 In 浓度的增加,净载流子浓度由1×10^?/cm₃变到8×10¹⁸/cm³,电阻率由0.77Ω·cm变到0.012Ω·cm,电子迁移率由648cm²/v·s 变到61cm²/V·s。这些实验结果证明,在单晶生长过程中可以控制本征缺陷的浓度,用掺杂方法可以控制 CdTe 的电学性质。更多还原

【Abstract】 High purity CdTe single crystals of both near stoichiometry andnonstoichiometry have been grown by the sublimation method under controlledpartial pressure of cadmium and tellurium respectively.Hexagonal prismaticblack single crystals of dimensions 4.5×3.2×12.5mm³ have been obtained bya growth period of one week.On the photoluminescence spectra for such crystals at 12K,abroad emissionband can be clearly observed in the energy region lower than 1.57eV exceptseveral emission peaks.The peak Ex at 1.596eV is believed to be due to afree excition line.The peaks Id at 1.592eV and Ia at 1.590eV are consideredto owe their origins to the recombination luminescence of excitons bound toneutral donors and neutral acceptors respectively.The peak labelled Ix at1.587eV has not yet been calibrated.The broad peak in the region 1.32-1.52eV is consists of a lot of small peaks with a peak seperation of about20meV between each other which is corresponding to the LO phonon energy.By means of thermodiffusion at 500-750℃,In was doped into CdTe crystalsThe measured result of electrical parameters of In doped CdTe crystals are asfollows: carrier concentrations—1×10¹⁶——8×10¹⁸cm^-3; electricalresistivities——0.77—0.012Ω.cm; mobilities——648—61cm²/V·s更多还原