【摘要】 本文采用阴极电淀积法在镀Ni黄铜衬底上制备CdSe_xTe_1-x多晶半导体薄脱。用X射线衍射仪和X射线能谱分析仪,对淀积物的相结构和成分作了分析和测定。由此可肯定淀积物具有立方闪锌矿结构,它实际上是由结构相同的CdSe和CdTe组成的两相混合物。同时也指出在淀积层中还含有相当数量的游离镉金属。更多还原

【Abstract】 Using the cathodic electrodeposition method,the polycrystalline CdSe_x Te_1-xthin films Were electroplated onto nickel-Plated brass substrates. X-ray diffraction and X-ray energy spectrum studies show the electrodeposited layers are cubic zinc blende Structure and the layers are essentially two phase mixture of CdSe-CdTe. The results also show the layers contain much free cadmium.更多还原