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半导体器件钝化膜应力的测量研究
Measurement and Study on Stresses of Passivated Films for Semiconductor Devices
【摘要】 作者建立了一套激光反射法薄膜应力测量装置。经分析得到其测量相对误差小于10%,灵敏度为1.8×108dyn/cm2。利用该装置测量了常用的PECVD SiN和SiO2钝化膜的应力,它们均呈压应力,数值分别为1~3×1010dyn/cm2和1~2×109dyn/cm2。给出了不同的工艺条件、薄膜厚度和测试温度下的应力以及退火处理对应力的影响。
【Abstract】 A laser reflection apparatus for measurement of stresses in thin films has been made. Calculation results showed that the relative measuring error was less than 10% and the sensitivity was 1.8 × 108dyn/cm2. Stresses in commonly used PECYD SiN and SiO2 Passivated films were measured using this appatatus and thcy exhibited compressive stress of 13+10dyn\cm2 and 1-2+103 dyn\cm2 respectively the effect of deposition comditions film thicknesses measting tempcrature and annealing process are presseted
【关键词】 半导体器件;
激光反射法;
钝化膜;
退火处理;
【Key words】 Semiconductor device laser reflcction measument passjvated film anncaling treatment;
【Key words】 Semiconductor device laser reflcction measument passjvated film anncaling treatment;
- 【文献出处】 微电子学 ,Microelectronics , 编辑部邮箱 ,1988年02期
- 【被引频次】1
- 【下载频次】99