【摘要】 <正> 我们采用自行设计制造的热壁外延（HWE）装置在GaAs（100）衬底上生长了CdTe晶膜。分析测试表明,该膜为（100）单晶膜。HWE技术生长的CdTe/GaAs结构为外延生长HgCdTe提供了十分合适的衬底。 外延源是用99.999％的cd和Te,在10^-4Pa真空,800～1000℃温度下煅烧100h而获得的CdTe多晶。衬底采用（100）GaAs单晶片,解理成6×6 mm²方块。清洁处理更多还原

【Abstract】 Epitaxial layers of CdTe were grown on GaAs(100) substrates by HWE system that was designed and made by ourselves. Analysis and measurements show that the epitexial layers are single crystal films in (100) orientation. The growth of CdTe/GaAs structure by HWE is the first time in China till now and it will provide available substrate materials for the growth of HgCdTe.更多还原