【摘要】 本文讨论了减压情况下硅外延生长过程的动力学问题,用混合动力学模型分析了压力和温度等参数对生长速率和薄膜淀积厚度均匀性的影响,以及质量输运与表面反应控制相互转变特征,理论分析与实验结果吻合得较好。更多还原

【Abstract】 The kinetics of silicon epitaxial process under reduced pressure has been discussed in this paper. The influence of pressure and temperature on the growth rate and film thickness uniformity in reactor are analyzed by using a comprehensive dynamic model. It shows the transitive character from mass-transfer control to the surface reaction control. The results of theoretic calculation compaired with experimental are agreement well.更多还原