【摘要】 用液相外延方法制造了InGaAsP/InP异质结光晶体管,在1.3μm光增益高于200,在1.0μm光增益在1000倍以上,并在0.7μm～15μm范围内测量了谱响应。更多还原

【Abstract】 High-gain InGaAsP/InP heterojunction photoransistors (HPT’s) were fabricated by a liquid-phase epitaxial (LPE) technique. The phototransistors have optical qaians greater than 200 for radiation at 1,3μm, than 1000 for radiation at 1.0μm. Phototransistor relative special response was measured at wavelengths in therange 0.7～1.5μm.更多还原