【摘要】 <正>SOI材料在制作高速、抗辐照电路、复合功能器件以及实现三维集成电路等方面有着重要的应用前景.实现SOI结构有多种途径:除蓝宝石外延(SOS)工艺外,还有多晶硅的激光或电子束熔化再结晶、石墨条加热再结晶和在单晶硅中大剂量深注入氧形成隔离层等方法.利用中子辐照使单晶硅损伤,得到了绝缘层衬底,然后以激光退火消除表面层损更多还原

【Abstract】 A semiconductor on semiinsulator (SOI) structure was obtained in which the insulator substrate is neutron-irradiated silicon, then annealed with CW Ar+ or Q switched Nd; YAG laser, semiconductor layer was obtained and the implanted impurities in it was activated. The experimental results proved it to be an ideal material for developing SOI devices by low-temperature process.更多还原