RANGE PROFILES OF 50-400 keV Br~+ IN AMORPHOUS SILICON AND QUARTZ CRYSTAL

【摘要】 <正> Range profiles of 50—400 keV Br~+ implanted in amorphous silicon and quartz crystal have been studied by the MeV ~4He~+ Rutherford backscattering. The range profiles of Br~+ have been obtained by means of ion implantation. The experimental data are compared with the Biersack theory. Results obtained show that the measured mean projected ranges are in good agreement with calculated values. As for range stragglings, the calculated values are systematically lower than experimental values in the first-order treatment. In the consideration of the second-order energy loss term, a better agreement in the range straggling is obtained. This indicates that the Biersack theory is successful in predicting range profiles of Br~+ in amorphous silicon and quartz crystals.更多还原

【Abstract】 Range profiles of 50—400 keV Br~+ implanted in amorphous silicon and quartz crystal have been studied by the MeV ~4He~+ Rutherford backscattering. The range profiles of Br~+ have been obtained by means of ion implantation. The experimental data are compared with the Biersack theory. Results obtained show that the measured mean projected ranges are in good agreement with calculated values. As for range stragglings, the calculated values are systematically lower than experimental values in the first-order treatment. In the consideration of the second-order energy loss term, a better agreement in the range straggling is obtained. This indicates that the Biersack theory is successful in predicting range profiles of Br~+ in amorphous silicon and quartz crystals.更多还原