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A NEW EPR DEFECT IN NEUTRON-IRRADIATED FZ-SILICON AND HYDROGEN PASSIVATION EFFECT

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【作者】 吴书祥晏懋洵许惠英毛晋昌吴恩

【Author】 WU SHUXIANG YAN MAOXUN XU HUIYING MAO JINCHANG WU EN (Department of Physics, Peking University)

【机构】 Department of PhysicsPeking UniversityPeking University

【摘要】 <正> A new EPR center having C2v symmetry and S=1, labeled as Si-PK3, has been observed for the first time in neutron-irradiated FZ-silicon. The spectra start to appear after 150℃ annealing and disappear at 500℃. The principal values of tensor g and D are determined. The microscopic model is proposed to be a trivacancy chain along the 〈110〉-direction with an oxygen atom situated in the middle. The annealing temperature of si-PK3 in hydrogencontaining samples is at least by 150℃ lower than that of other samples.

【Abstract】 A new EPR center having C2v symmetry and S=1, labeled as Si-PK3, has been observed for the first time in neutron-irradiated FZ-silicon. The spectra start to appear after 150℃ annealing and disappear at 500℃. The principal values of tensor g and D are determined. The microscopic model is proposed to be a trivacancy chain along the 〈110〉-direction with an oxygen atom situated in the middle. The annealing temperature of si-PK3 in hydrogencontaining samples is at least by 150℃ lower than that of other samples.

【基金】 Project supported by the National Natural Science Foundation of China.
  • 【文献出处】 Science in China,Ser.A ,中国科学A辑(英文版) , 编辑部邮箱 ,1988年01期
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