【摘要】 对GaP:N(Te,Zn)中束缚激子发光热猝灭的测量和分析表明,中性Te原子以“俄歇阻断”作用,在NN对发光猝灭温度相对于不掺施主和受主的GaP:N有所降低方面起了关键的影响。掺Te后孤立N发光峰的猝灭温度提高,则是由于增加了N原子上电子分布的几率。这支持了N束缚激子的Hopfield-Thomas-Lyneh模型。受主Zn的作用是使自由激子发光随温度升高而缓慢增强,对A峰猝灭的减缓可能也有贡献。更多还原

【Abstract】 Through the measurement and analysis for the bound exciton luminescence thermal quenching in GaP: N(Te, Zn), it is shown that the neutral Te atoms play an important role in the decrease of NN pair luminescence quenching temperature relative to the undoped GaP: N by the "Auger blocking" effect of Te~0. On the other hand, the doped Te enhances the distribution probability of electrons on isolated N atoms, resulting in an increase in the related luminescence quenching temperature of the isolated N’s. The latter phenomenon indicates that the Hopfield-Thomas-Lynch (HTL) model might be available for the isolated N center in GaP. Besides a possible contribution to the relaxation of isolated N luminescence (peak A) quenching, the accepter Zn supplies more holes due to photo-excitation at higher temperatures, accompanying stronger luminescence from free excitons compared with undoped GaP: N films.更多还原