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用傅里叶变换光谱仪同时测定半导体浅施主和浅受主杂质浓度的装置

AN EXPERIMENTAL SET-UP COMBINED WITH A FOURIER TRANSFORM SPECTROMETER FOR SIMULTANEOUS DETERMINATION OF CONCENTRATIONS OF BOTH SHALLOW ACCEPTORS AND DONORS IN SEMICONDUCTORS

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【作者】 肖金才俞志毅陆卫叶红娟张继昌

【Author】 XIAO JINCAI, YU ZHIYI, LU WEI, YE HONGJUAN, ZHANG JICHANG (Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Academia Sinica)

【机构】 中国科学院上海技术物理研究所中国科学院上海技术物理研究所红外物理开放研究实验室同济大学物理系

【摘要】 报道了一个与Nicolet 200SXV傅里叶变换光谱仪联用的可同时测定半导体样品中浅施主和浅受主杂质浓度的实验装置,介绍了用该装置同时测定硅样品中杂质硼和磷浓度的实验。

【Abstract】 An experimental set-up combined with a Nicolet 200SXV Fourier transform spectrometer used for simultaneous determination of concentrations of both shallow acceptors and donors in semiconductor samples under the illumination of an external light beam (h_v≥E_g)is reported. As an example, the concentrations of both boron and phosphorus impurities in silicon have been simultaneously measured using this set-up.

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