【摘要】 本文对磷离子能量在0.5—7.5MeV、剂量在2.0×10¹²—1.0×10¹³/cm²范围内注入硅中的载流子剖面进行了研究,发现在此条件下,n型磷载流子剖面是由两个只有不同偏差σ_tront（σ前）和σ_back（σ后）的高斯分布相连接组成的。根据实验所得剖面特性,提出了多次迭加形成平坦剖面的方法。用这种方法结合SiO₂膜屏蔽和调整注入离子能量、剂量,能够获得各种有特殊要求的载流子浓度剖面。为了得到好的可控性和可重复性,采用了瞬态退火技术。透射电镜分析表明:在我们所用退火条件下,剩余缺陷并未出现。这种迭加注入已应用于特种器件研制中,试制出的产品获得令人满意的结果。更多还原

【Abstract】 The MeV implantation is very important for fabricating semiconductor devices and very large scale integrated circuits. The carrier concentration profiles of high energy P-+ implanted into silicon have been studied. P+ ions with energy ranging from 0.5 to 7.5 MeV were implanted into silicon with dose ranging from 2×1012 to 1013/cm2. The results indicate that carrier concentration profiles consist of two Gaussians with different deviation σfront and σback..A method of forming uniform profiles with multiple implantation was suggested.The various specific carrier concentration profiles can be obtained by multiple implantations with different energies, doses and masking technology. Rapid thermal annealing (RTA) has been used to obtain good reliability and repeatability. The residual defects of the samples are measured by high voltage TEM. It is shown that after RTA no defects appear. Specific transistors produced using P+multiple implantation have satisfactory characters.更多还原