节点文献
用于器件模拟的非稳态输运方程及有关参数的提取
Nonstationary Transport Equations and the Extraction of Related Parameters for Semiconductor Device Modeling
【摘要】 <正> 一、引言 随着大规模集成电路的发展,器件尺寸不断缩小。在许多器件中,局部电场可以很高,载流子能被显著加速。载流子通过器件的渡越时间可和能量弛豫时间相近,在这种情形下漂移速度过冲不可避免。这时,传统的稳态输运理论不再适用,因为这种理论把速度看作瞬时电场的函数。Monte Carlo方法由于计算量大,目前还难以实际应用于器件模拟。因此,希望发展基于宏观描述的非稳态输运的方法,以节省计算机时间,开发实用化的模拟程序。
【Abstract】 This work extends the macroscopic equations for the nonstationary transport to the cases of noparabolic bands. The equations are appropriate for the problem with two different kinds of valleys. The collision terms in the equations ate written in a form, in which the parametters can be extracted conveniently by the Monte Carlo method. The extraction of the parameters in the callision terms and the definition of the effective mass are also discussed.
- 【文献出处】 固体电子学研究与进展 ,Research & Progress of Solid State Electronics , 编辑部邮箱 ,1988年04期
- 【下载频次】19