【摘要】 <正> 一、引言 在MOSFET研究发展中,轻掺杂漏（LDD）MOSFET和自对准MOSFET已越来越引人注目。这两种MOSFET制造中,边墙的形成是关键。如何精确控制边墙宽度是控制轻掺杂漏长度的基础,而控制边墙的高度和宽度则对自对准硅化钛MOSFET中的栅与漏—源区硅化钛电极的隔离十分重要。此外,边墙技术还可应用于形成亚微米栅以取代掩膜形成栅。本文介绍了一种形成一定高度和宽度的SiO₂边墙的方法。更多还原

【Abstract】 An experimental method to form a definite height and width SiO2 sidewall spacer is described in this paper. It is found that when the slope angle of a step is large than 70°, a good SiO2 siaewall spacer which ha" the same width of the top and bottom can be easily achieved with areactive ion etching the SiO2 deposited on the step. This method of forming SiO2 spacer has been applied to lightly-doped-drain MOSFET and self-aligned titanium silicide MOSFET.更多还原