【摘要】 <正> 一、引言 碳化硅具有优异的物理、化学稳定性,高的击穿电场和饱和电子迁移率等特性,因此被广泛用作温敏器件、集成电路表面钝化材料。 随着超大规模集成电路技术的发展,三元化合物薄膜的开发得到了重视,如氮氧化硅薄膜作为抗钠离子和抗潮湿的最后保护层,双层技术的中间层,已用于制造VLSI。氮碳化钛(TiC_xN_y)薄膜被用于保护涂层等。笔者在研究碳化硅、氮化硅薄膜的基础上,开展了碳氮化硅薄膜材料的研究。选择等离子增强化学汽相淀积(PECVD)方法制备碳化硅,碳氮化硅薄膜。更多还原

【Abstract】 Plasma-enhanced chemically vapor-deposited (PECVD) SiCx:H and SiNx:Cy: H thin films have been prepared using a mixture of SiH4, CH4, NH3 and Ar gases. The relation ship among the growth rate, the refractive index and the deposition parameters were studied. Analysis of the film composition and structure was performed by using the quantitative Auger Electron Spectroscopy(AES) and the Electron Spectroscopy for Chemical Analysis(ESCA). Some interesting results were obtained.更多还原