【摘要】 <正> 一、 引言 低温能避免高温引起的杂质再分布,杂质表面耗尽,“鸟嘴”结构形成,以及硅片翘曲和热诱生缺陷等,保证高密度IC的实现。硅的低温氧化,是VLSI制作中尚未解决的重要课题,因此引起了人们很大关注。本工作采用低温等离子体技术,研究了900℃以下硅的等离子体氧化,探讨了膜的生长机理和规律,膜的性质与工艺条件的关系。更多还原

【Abstract】 This paper studied the RF plasma oxidation in a silicon below 900℃, the growth rule and mechanism of a SiO2 film, the dependence of its properties on the pro- eessing conditions, and also proposed a plasma oxidation model. From experiments it was observed that the growth rate of the SiO2 film by the plasma oxidation depended on the procassing conditions and that the growth complied with a linear-parabolic relation. Besides, the fixed charges in the film changed from negative to positive with the increasing temperature. The properties of the plasma-grown SiO2 film at 900℃ are as good as that of the thermal-grown SiO2 at 1150℃.更多还原