【摘要】 <正> 一、引言 硅压力传感器已被广泛用于汽车、控制及生物测量等领域。由于工艺难度大,压力传感器的应变膜尺寸通常大于1×1mm。膜主要用各向异性腐蚀技术形成,需从硅片背面减薄,这样就需要双面光刻。为提高精度,必须增加特殊设备。而这一工艺有明显的不足,与IC工艺兼容性差,硅片利用率低,对制造大规模集成压力传感器,高密度的压力传感器阵列有一定困难。更多还原

【Abstract】 Current fabrication techniques appropriate to the integrated pressure sensors were introduced. These techniques are basically traditional process and have a good compatibility with IC process. Then planar absolute pressure sensing cavity fabrication techniques, being developed by authors, were reported briefly.更多还原