【摘要】 本文对硅外延常用的卧式矩形反应器中的流速分布进行了分析,用流体力学方程的精确解代替管内流速为抛物线分布的近似解,作出了硅外延生长速率纵向和横向分布的估算,计算值与实测结果吻合较好。更多还原

【Abstract】 The fluid speed distribution was analysed in a horizontal vapor phase epitaxial silicon rectangular reactor. An accurate analytical solution for fluid-mechanics equations was used instead of the approximate assumption that the velocity profile is parabolic in the reactor. Both silicon growth rates along and across the tilted susceptor were estimated.The experimental results of silicon growth from SiCL4-H2 system agree well with the theoritical analysis更多还原