【摘要】 测量比较了掺Si和未掺杂LEC GaAs晶锭不同部位EL2浓度和位错密度分布。结果表明,掺Si样品中EL2浓度径向分布和位错密度径向分布分别为M形和W形,而未掺杂样品中两者均为W形。讨论了两者间不同对应关系的机理。更多还原

【Abstract】 We measure and compare the radial distributions of EL2 concentration and dislocation density in Si-doped and undoped LEC GaAs crystals. The results indicate that the radial distributions of EL2 concentration are W-shaped and M-shaped in undoped and Si-doped specimens, respectively, while the distributions of dislocation density are W-shaped in both undoped and Si-doped specimens. The correlations between the distributions of EL2 concentration and dislocation density in Si-doped and undoped specimens are discussed.更多还原