【摘要】 本文报导在2～2kHz的频率范围内测得的多晶硅发射极晶体管的低频噪声频谱,并论述低频噪声的产生机理。多晶硅发射极晶体管具有较常规晶体管优异的低频噪声特性而可望成为一种合适的低频低噪声器件。更多还原

【Abstract】 This paper deals with the low-frequency noise spectra (measured at the frequencies ranged from 2Hz to 2kHz) of the transistor with polysilicon emitter,and the generation mechanism of this low-frequency noise. The polysilicon emitter transistor has an excellent low-frequency noise behavior, and thus can become a suitable low-frequency device with a low noise figure.更多还原