【摘要】 本文研究了单品－多晶硅Ｐ＋Ｎ结二极管基区载流子寿命与掺杂浓度、晶粒大小 的关系。在重掺杂 Ｐ型单晶硅上，用 ＬＰＣＶＤ法生长多晶硅薄膜，离子注入磷后， 形成 Ｐ＋Ｎ结。掺磷浓度从 ５．４×１０１４ｃｍ－３变化到 ６．０×１０１８ｃｍ－３，相应二极管的 基区少数载流子寿命从１．４×１０－１０Ｓ减少到７．５×１０－１３ｓ并且随着晶粒尺寸的增加， 寿命变大。实验结果和 Ｈｏｗａｒｄ Ｃ．Ｃａｒｄ等人对 Ｎ型多晶硅少数载流子寿命随掺 杂浓度、晶粒大小变化的理论相符合．更多还原

【Abstract】 The dependence of minority carrier lifetime on the doping concentration and grain size in the base of silicon-polysilicon P+N junction is investiga- ted. Polysilicon film is deposited by LPCVD method on heavily doped P- type silicon. Implanted phophorus concentration varies from 5. 4 ×10 14 cm -3 to 6.0 × 10 18 cm-3,while the minority carrier lifetime in the base of silicon- polysilicon P+N junction decreases from 1.4 × 10-10s to 7.5×10-13s. The lifetime tp increases as the grain size is increased, while the implanted do- se remains the same. The experimental results coincide with Howard C. Card and others’ theoretical analyses.更多还原