【摘要】 报导了在国内实现MeV级能量离子注入的实验研究结果.在n-型Si(100)衬底上使用MeV能量的B离子注入产生p~+-型层和快速形成n-p-n结构.结果表明,经合适退火的样品内部,形成了深掩埋的注入激活层和良好的表面单晶层.采用双重注入的增强退火效应,能更为有效地对高能B离子注入样品实现退火,这对高能离子注入的实际应用有重要意义.更多还原

【Abstract】 The MeV high energy ion implantation experiment is first reported do- mestically. The p⁺-type buried layers of boron in silicon samples are made by implanting boron ions of 1³ MeV energy with doses of 1×10¹³⁵×10¹⁵ cm^-2.In the meanwhile, the n-p-n structure is produced rapidly. The im- planted samples under different annealing conditions are inverstigated mainly through automatic spreading resistance probe measurement, MOS structure C-V electrical properties measurment, TEM and TED observation. It is found that not only the implanted buried layers but also a good top crystal- line layers are formed, and the annealing of deep implanted layers is effec- tive by making use of enhanced annealing effect of double implantation. This discovery of enhanced annealing of double implantation is very useful for the new application of high energy ion implantation.更多还原