节点文献
离子注入重掺N的GaP中过带隙发光谱
A PL OF BEYOND ENERGY GAP RADIATION IN A HEAVY DOPED GaP WITH NITROGEN ION IMPLANTATION
【摘要】 为了取得蓝色发光材料,我们研究了GaP-GaN固溶体.在GaP外延片的衬底上进行了离子注入重掺N,获得了不同于GaP结构的晶体.X射线衍射花样表明,注N~+的GaP结构变成纤锌矿格子,这恰似GaN的结构.通过快速退火,进行了光致发光测量,无论退火前和后都得到了过带隙的发光.
【Abstract】 In order to get blue emitting material, a GaP-GaN solid solution is studied. This solid solution is produced by means of heavily doped N~+ implantation, and a new crystal lattice achieved which is distinct from that of GaP. The X-ray diffraction pattern shows that the structure of N~+ implanted GaP is a wurtzite, as well as GaN crystal. Before and after rapid thermal annealing, the PL is measured, a beyond energy gap emission is obtained in each case.
【关键词】 光致发光；
离子注入；
X射线衍射；
快速退火；
【Key words】 photoluminescence； ion implantation； X-ray diffraction； rapid thermal annealing.；
【Key words】 photoluminescence； ion implantation； X-ray diffraction； rapid thermal annealing.；
【基金】 国家自然科学基金资助项目
- 【文献出处】 北京师范大学学报(自然科学版) ,Journal of Beijing Normal University(Natural Science) , 编辑部邮箱 ,1988年02期
- 【被引频次】1
- 【下载频次】22