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二硅化钨形成、结构和电性质的研究

Investigation of Tungsten Silicide Formation and Its Structural and Electrical Properties

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【作者】 丁训良王忠烈钱亚宏

【Author】 Ding Xunliang/Institute of Low Energy Nuclear Physics, Beijing Normal University, Beijing, ChinaWang Zhonglie/Institute of Low Energy Nuclear Physics, Beijing Normal University, Beijing, ChinaQian Yahong/Institute of Low Energy Nuclear Physics, Beijing Normal University, Beijing, China

【机构】 北京师范大学低能核物理研究所北京师范大学低能核物理研究所

【摘要】 本文报道用As离子束混合形成WSi2的结构和电性质的研究结果。指出在衬底温度350℃下注入,WSi2的形成温度可大大降低.WSi2薄膜电阻率随后退火温度的变化与微结构有关.淀积薄膜过程中引入的氧杂质限止晶粒生长,影响WSi2薄膜的电阻率.观察到退火过程中氧杂质和注入As离子的再分布和严重丢失.进一步讨论了离子束混合形成硅化物的机理.

【Abstract】 WSi2 film has been successfully formed by As ion beam mixing.The factors afeectingthe structural and electrical properties of ion beam induced WSi2 film have ben studied bymeans of Rutherford Backscatering Spectroscopy (RBS), 16O(a, a)16O resonance scattering, X-ray diffraction (XRD), transmission electron microscopy (TEM) and four-probe resistance me-asurement. The formation temperature of the refractory tungsten silicide can be significantlyreduced by some elevation of substrate temperature during implantation.The change in theresistivity of the film by annealing is related to microstructure.The incorporation of oxygenimpurity during deposition can greatly affect the resistivity of the resulting silicide film.Theoxygen impurity present in the films limits the grain growth and leads to smaller grain andhigher resistivity.The redistributions of oxygen and implanted As ion during annealing wereobserved.A significant portion of implanted As is lost from the surface after annealing athigher temperature.Finally, the mechanism of the silicide formation by ion beam mixing isdiscussed.

  • 【文献出处】 半导体学报 ,Chinese Journal of Semiconductors , 编辑部邮箱 ,1988年05期
  • 【下载频次】124
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