【摘要】 本文报道用As离子束混合形成WSi₂的结构和电性质的研究结果。指出在衬底温度350℃下注入,WSi₂的形成温度可大大降低.WSi₂薄膜电阻率随后退火温度的变化与微结构有关.淀积薄膜过程中引入的氧杂质限止晶粒生长,影响WSi₂薄膜的电阻率.观察到退火过程中氧杂质和注入As离子的再分布和严重丢失.进一步讨论了离子束混合形成硅化物的机理.更多还原

【Abstract】 WSi₂ film has been successfully formed by As ion beam mixing.The factors afeectingthe structural and electrical properties of ion beam induced WSi₂ film have ben studied bymeans of Rutherford Backscatering Spectroscopy （RBS）, ¹⁶O（a, a）¹⁶O resonance scattering, X-ray diffraction （XRD）, transmission electron microscopy （TEM） and four-probe resistance me-asurement. The formation temperature of the refractory tungsten silicide can be significantlyreduced by some elevation of substrate temperature during implantation.The change in theresistivity of the film by annealing is related to microstructure.The incorporation of oxygenimpurity during deposition can greatly affect the resistivity of the resulting silicide film.Theoxygen impurity present in the films limits the grain growth and leads to smaller grain andhigher resistivity.The redistributions of oxygen and implanted As ion during annealing wereobserved.A significant portion of implanted As is lost from the surface after annealing athigher temperature.Finally, the mechanism of the silicide formation by ion beam mixing isdiscussed.更多还原