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Al-Si接触的快速热退火
Rapid Thermal Annealing of Al-Si Contacts
【摘要】 本文报道了用常规管式炉30秒钟快速热退火代替常规热合金化做Al-Si欧姆接触的简捷方法.通过俄歇电子能谱、扫描电子显微镜、接触电阻率和PN结反向电流的研究证实该法能有效地抑制导致浅结器件失效的Al-Si互扩散现象,从而达到保持良好结特性的欧姆接触.
【Abstract】 A simple and direct method,Al-Si ohmic contact achieved by utilizing rapid thermalannealing for 30 sec of conventional furnace instead of conventional sintering,is reported.AES, SEM, specific contact resistance and PN junction reverse currem investigations showthat Al-Si interdiffusion phenomenon which causes the failure for shallow junction device canbe restricted effectively,therefore ohmic contact with good junction property can be achieved.
【关键词】 欧姆接触;
快速热退火;
接触电阻率;
【Key words】 Ohmic contact; Rapid thermal Annealing; Specific contact resistance;
【Key words】 Ohmic contact; Rapid thermal Annealing; Specific contact resistance;
- 【文献出处】 半导体学报 ,Chinese Journal of Semiconductors , 编辑部邮箱 ,1988年03期
- 【被引频次】7
- 【下载频次】237