【摘要】 利用r.f.辉光放电方法,在单室生长系统内,由周期性地改变SiH₄和NH₃反应气氛成功地获得了Ls由10A到200A的a-Si:H/a-SiN_x:H超晶格结构.由TEM和XPS实验结果证明超晶格结构具有平滑陡峭的界面.通过分析（Si-H）键拉伸振动模在波数2400cm^-1-1800cm^-1范围内的精细结构,揭示了a-Si:H/a-SiN_x:H界面中（Si-H）N振动模的形式.并证实有过量的H键合于界面层中.由紫外-可见吸收光谱的研究,证明当 L_s<60A,光学能隙E_R^opt的位移是超晶格结构中量子势阱限制效应的影响.其实验值和理论计算值符合得较好.更多还原

【Abstract】 We have successfully made amorphous semiconductor superlattices of a-Si:H/a-SiN_x:Hfilms consisting of 28-102 periods of 10-200 A thick a-Si:H and 60 A a-SiN_x:H by periodicalternating the plasma gas mixture in single reaction chamber of plasma deposition system. Theresults of TEM and XPS show the smooth and sharp boundaries between the layers.The vib-ration modes of （Si-H）N stretchbonds and extra hydrogen bonded at the interface have beendiscovered by analysing fine structure of （Si-H）stretch mode in the wavenumbers of 2400-1800cm^-1.The results of investigation of UV-VB spectra indicate that the shift of optical energygap E_g^opt in a-Si:H/a-SiN_x:H superlattices is induced by quantum well effect.更多还原