【摘要】 用椭偏光谱研究了硅片抛光的表面质量.假设一个四相模型,对测量数据进行分析处理.结果表明,（ⅰ）用带间光谱的E₁结构,可以分辨表层质量的稍优或稍劣,而不一定要用E₂结构.（ⅱ）在E₁结构附近,用介电函数的实部B＇（hv）区分表层质量的微细差异,似乎比用其虚部B＂（hv）效果更佳.更多还原

【Abstract】 The surface trace imperfection of silicon wafers resulting from different polishing techno-logies has been quantitatively characterized by use of spectroscopic ellipsometry.The dielectricfunction θ=θ’+iθ" for the residual damaged thin layer at the surface was calculatedfrom the ellipsometric parameters （?）,ψon the basis of a four-phase model. Results show that（i） A diagnosis for very small differences between various conventionally adopted polishingprocesses can be feasibly realized in the E₁ spectroscopic structure of the silicon interband trans-ition region,rejecting the necessity of E₂-structure which emerges from a more shorter UVrange.（ii） It seems that for silicon, a higher sensitivity for the surface imperfection may beobtained with the real part ∈’ of the dielectric function than its imaginary ∈" in the wavelengthrange of E₁.更多还原