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质量迁移层对InGaAsP BH半导体激光器阈值电流和模式行为的影响
Influence of Mass-Transported Layers on Threshold Current and Mode Behavior in InGaAsP BH Semiconductor Lasers
【摘要】 用 Schwarz-Christoffel变换法计算了质量迁移InGaAsP BH激光器中的结电压分布;分析了迁移层和有源层侧向厚度,上限制层空穴浓度和有源层注入电流对迁移层同质结漏电流的影响;并提出以过渡模式为界,区分A类和B类模式,从理论上比较全面地分析了五层对称平板波导的模式行为;指出降低阈值电流和保证单基横模工作这两方面对迁移层厚度有相反的要求,从而存在一定意义下的最佳迁移层厚度.
【Abstract】 The junction voltage distributions in InGaAsP mass-transported (MT) BH lasers are cal-culated by Schwarz-Christoffel transformation technique.The effects of MT layer thickness,active layer thickness,the hole concentration in upper confining layer, and of injected currentthrough active layer on the leakage current through MT layer homojunction are analyzed. Theguiding modes are divided into A and B classes according to a proposed "transition mode" bywhich the mode behavior of a symmetrical five-layer slab waveguide is analyzed in a rathercomprehensive way.It is shown that the requirement for decreasing the threshold current andthe requirement for lasing in single fundamental lateral mode are somewhat contradictory,thus the thickness of MT layer should have the best value in a certain sense.
- 【文献出处】 半导体学报 ,Chinese Journal of Semiconductors , 编辑部邮箱 ,1988年02期
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