【摘要】 应用射频溅射法制备SnO₂膜。对SnO₂膜进行了AES、ESCA理化学分析,结果表明:SnO₂膜的成分完全由SnO₂所组成,膜中并没有分离的Sn的成分。同时也对SnO₂膜进行了气敏特性测试分析,结果表明:SnO₂和Pd/SnO₂膜对CH₄、CO、H₂、NO₂、H₂S等气体均有明显的敏感特性,当SnO₂膜表面掺入几十（?）P_d后,对上述气体的敏感性有所增加,工作温度可降低到150℃左右,选择性也有不同程度的改善。更多还原

【Abstract】 Depositi on and gas sensing characteristic of SnO₂ thin film prepared by rf sputtering have been investigated. In order to improve gas sensing property, a Pd doped SnO₂ film was used. Pd film of a few tens （?） thick was sputtered on the deposited SnO₂ film. The Pd doped layer was formed after beat treatment.AES and ESCA of the SnO₂ film showed that the film was composed of SnO_x, without any tin element. Composition distribution both on surface, and in depth of SnO₂ film were uniform.Gas sensing characteristic of SnO₂ film strongly depended upon substrate temperature. The SnO₂ film was sensitive for CH₄、CO、H₂、H₂S and NO₂ gases at above 200℃, while the Pd/SnO₂ film was shown with good sensing response at 150℃ and improved selectivity.更多还原