【摘要】 本文研究了硅中离子注入层的卤钨灯辐照快速退火,对注B 和注P 样品分别测量了经1100℃、15秒和1050℃、12秒退火后注入层的载流子浓度分布,并与950℃、30分钟常规热退火样品作了比较;结果表明,卤钨灯辐照快速退火具有电激活率高、注入杂质再分布小及易于推广使用等优点.对于100keV、1×10¹⁵cm^-2P 注入样品,经1050、10秒卤钨灯辐照退火后,表面薄层电阻为74.8Ω/□;对通过920（?）SiO₂膜,25keV、1×10¹⁵cm^-2B 注入样品,经1100℃、15秒卤钨灯辐照快速退火后表面薄层电阻为238.0Ω/□;而经过950℃、30分钟常规热退火后,以上两种样品的表面薄层电阻分别为72.0Ω/□和245.8Ω/□.采用这种退火方法制作出了结深为0.10μm 的近突变P⁺N 结,并测量了结深与退火时间的关系.更多还原

【Abstract】 Rapid isothermal annealing of ion implanted Si with halogen lamps hasbeen studied.It is shown that halogen lamp annealing at about 1100℃ for afew seconds has many advantages over the ordinary furnace annealing,such asthe high electrical activation,little redistribution of implanted impurity andshallower junction depth.For dose of 1×10¹⁵ cm^-2P and 1×10¹⁵cm^-2B imp-lantation into Si,annealing at about 1100℃ for 10 seconds results in electr-ical activation cmparable to or better than those obtained by conventional fur-nace annealing at 950℃ for 30 minutes,but with negligible redistribution ofimplanted impurities.Carrier concentration profile is measured by layer-stripp-ing method,and approximately abrupt PN junction with Xj=0.1μm has beenobtained.更多还原