【摘要】 本文应用剥层椭偏光法对硅中大剂量P⁺注入形成的非晶层在CWOO₂激光退火时的固相外延模型进行静态实验证明.获得CWCO₂激光退火的固相外延生长平均速率达到4.2×10³（?）/sec.本文并应用隐式差分方法计算了退火样品的体内温度的径向分布T（r,t）及离子注入非晶层外延再结晶厚度的径向分布ξ（r,t）的离散值,得到选择退火条件的一些依据.更多还原

【Abstract】 This paper has proved that the CWCO₂ laser annealing process of the amor-phous layer formed by high dose P⁺-implantation on Si is a solid phase epita-xial process.The results of our experiments show that the average rate ofsolid phase epitaxial recrystallization during the CWCO₂ laser annealing is 4.2x 10³（?）/sec,and the whole annealing process is accomplished in a time ofseveral milliseconds.The discrete values of the radial temperature distributionT（r,t）in the bulk of the annealed sample and the radical distribution ξ（r,t）ofthe thickness of recrystallized layer are calculated by using the implicit dif-ferential method of solving the equation of heat conduetion.The caleulationalso provides a basis for choosing optimum annealing conditions.更多还原