【摘要】 本文报导的U 型槽隔离技术,是采用反应离子刻蚀形成U 型槽,然后用多晶硅填槽,其多晶硅是用3—5%的SiH(?)与超纯氢的混合物在600-650℃下热分解生成的,典型生长速率为300-500(?)/min。采用此技术研制的双极型集成电路,取得了好的等平面隔离效果.所研制出的电路,每门延迟时间为0.8-0.9ns(其中,最快达350ps)更多还原

【Abstract】 This paper reports the U-groove iso-lation technology.The U-groove is formedby RIE.Polysilicon filling groove is for-med by silane decomposition at 600-650℃.A mixture of 3-5% Sill₄ with hyper-pure hydrogen was used resultins in a ty-pical growth rate of about 300-500（?）/min.By using of this technology,an isoplanarwell-isolated bipolar IC wes produced.De-lay time per gate was 0.8-0.9ns.The fa-stest one was 350ps.更多还原