【摘要】 本文阐述了窄禁带半导体的一般性质,较详细地论述了近年来采用吸收光谱、反射光谱、调制反射光谱、磁光光谱、荧光光谱和喇曼光谱等光学手段研究HgCdTe等窄禁带半导体的能带结构、晶格振动、自由载流子和杂质缺陷的光学效应的进展。更多还原

【Abstract】 The general properties of narrow gap semiconductors and the recent progress in studies of energy band structure, lattice vibration, optical effects of free carriers, impurities and defects of narrow gap semiconductors HgCdTe and InSb using the methods of absorption, reflection, modulated reflection, magneto-optics, luminescence and Raman spectra are discussed.更多还原