【摘要】 本文用电子辐照的方法在n型InP中引入缺陷,并以深能级瞬态谱为基础,结合多种实验方法和理论计算,对缺陷的结构作了较为系统的研究和分析。首先,根据空位的引入和迁移模型,从理论上计算出In和P单空位的引入率和消失温度,经与实验结果比较,鉴别出室温电子辐照后InP中主要的缺陷是以络合结构的形式存在的。文中还推导了连续界面态与DLTS信号的关系式。很据这一关系式,经计算机运算,证实辐照前InP DLTS谱中的某一个宽峰是由界面电子的发射和俘获所引起。从实验还发现,经电子辐照后该峰明显变小,反映了界面态密度的降低,结合表面光电压法对表面复合速率的估算,进一步证明辐照确能减小InP与L-B膜之间的界面态。更多还原

【Abstract】 Systematic studies on the structure of defects in InP caused by electron irradiation are conducted basing on the experimental measurements and theoratical calculations. The introducing rates and annealing out temperatures of In and P vacancies are estimated using proper theoratical models. These calculations reveal that after room temperature irradiation only complexes may exist. It is also supported by our experimental data that the sum of introducing rates of three detected levels are less than the theoratical value calculated for single vacancies.According to our equation on the relation between interface states and DLTS signal and result of computer calculation we believe that the broad peak appeared in DLTS diagram before irradiation is related to interface states. Its disappearance after electron irradiation suggests the reduction of interface state, this is further comfirmed by the reduction of surface recombination rate derived from the result of surface photo voltage measurement.更多还原