【摘要】 本文对高温电子辐照硅中产生的缺陷进行了研究,发现缺陷的引进率随电子辐照温度的增加而增加,在达到极值温度T_m后,缺陷的引进率将随之而下降,T_m值与缺陷的退火激活能有关。E_s缺陷（E_c—0.36eV）浓度在高温电子辐照中显著增加,在330℃高温电子辐照时,E₃缺陷浓度为室温电子辐照的6倍。研究结果表明,E₃缺陷的可能结构为与多空位和氧有关的复合体。更多还原

【Abstract】 A study of defects in silicon produced by hightemperature electron irradiation was carried out. It was found that the introduction rate of defect increased with the temperature at which the samples were irradiated by electron. After the temperature reached an "extreme" value Tm, the introduction rate of defect began to decrease. The Tm value was related to the annealing activation energy of defect. It was also found that the density of E₃ （E_c-0.36 eV） defects greatly increased in hightemperature electron irradiation. When electron irradiation was carried out at 330?, the density of E₃ defects was about 6 times as large as that at room temperature. The possible structure of the E₃ defect is multivacancy-oxygen complex.更多还原