【摘要】 本文对a-Si:H中掺杂和缺陷机制提出了一个多能级模型,并应用了统计物理学的方法计算了a-Si:H的掺杂效率η。所得结果,不仅包括了street等人在此问题的全部讨论,而且还区分了重掺杂与轻掺杂有所不同,轻掺杂时的η与正常情况讨论一致,只有重掺杂时才出现η∝规律。更多还原

【Abstract】 This article present a multi-level model on the doping mechanism and defect state in the gap of a-Si:H films, and calcnlate the doping efficiency TJ using the method of statistical physics. It was found that the results from the model and calculation not only cover all arguments of Street et al., but also make a distinction between heavy and light doping. The y of light doping agrees with usual results, only heavy doping obeys η∝N^-1/2low.更多还原