【摘要】 在4.2—273K温区内,0—18kbar压强下,测量了CeBi单晶的电阻率。实验表明,尼尔温度随压强增大而增大,且温度T>T_N后,磁性电阻率ρ_s与lnΤ成正比。计及p-f作用,我们用Anderson模型计算了与压强有关的CeBi磁性电阻率,并将计算结果与实验比较。结果表明,4f电子能级与费密能级的距离随压强增大而减小,压强增大导致p-f作用的增强。更多还原

【Abstract】 The electrical resistivity of CeBi single crystal has been measured in the temperature range 4.2-273 K and under pressure up to 18 kbar. The experimental results show that the Neel temperature increases with pressure and the magnetic resistivity p, varies proportionally to InT at T>T_N. By using Anderson model and taking into account p-f mixing mechanism, we calculated the pressure dependence of CeBi magnetic resistivity. The present results are compared with the experimental data. It is shown that the distance between the 4f level and the Fermi level decreases with rising pressure and pressure enhances the p-f interaction.更多还原