【摘要】 本工作研究了低温、低压下硅薄膜的激光淀积过程,获得均匀性好,平方厘米量级的多晶和非晶态薄膜。仔细测量了淀积过程的最佳条件,在380℃基片温度做得多晶膜。利用有共振吸收的光学击穿以及气体被击穿后产生爆炸波导致高能Si原子产生的模型,讨论了激光等离子体CVD动力学过程。发现TEA CO₂激光击穿SiH₄,以及诱发的爆炸波对硅膜生长有重要作用。理论算得的硅膜生长面积和晶态结构与实验定性符合。更多还原

【Abstract】 In this work, the laser diposition process of Si thin film at low temperature and under low pressure is studied. We obtain both poly-crystalline and non-crystalline films, the sizes of them are about a few cm2, and they are satisfactorily homogeneous. The optimum condition of diposition process is determined care-fully. When the pedestal temperature is 380? poly-crystalline films are formed. Based on the model of photo-breakdown of SiH4 through resonant absorption of laser and energetic Si-atom formation induced by the shock waves produced thereafter, the laser plasma CDV dynamic process is analysed. We find that the photo-breakdown of SiH₄ by TEA CO₂ laser and the induced shock waves have important influuences on the growth of Si films. The sizes and crystalline structure of Si films as calculated theore tically agree qualitatively with experimental results.更多还原