【摘要】 非化学计量的二氧化锡是一种 n 型半导体材料,具有良好的光电特性。本文用等离子增强化学气相沉积（PECVD）法生长 SnO_2-x薄膜,并进行了生长条件与其结构和性能的研究。结果表明:不同的淀积条件,可以获得从多晶到非晶态不同结构、化学稳定性良好、可见光透射率高、具有不同电导率的 SnO_2-x薄膜材料。更多还原

【Abstract】 The non-stoichiometric tin oxide is a n-type semiconductor with excellent elect-rical and optical properties.The thin films of SnO_2-x were prepared by meansof PECVD method.The structures,properties of electricity and optics,and chemicalstability of the films were studied.The results obtained express that the thin filmsof SnO_2-x with exellent chemical stability,transparency for visible light,differentelectric conductivities and different structurs of polycrystal or amorphous states canbe obtained under different conditions of deposition.更多还原