【摘要】 采用PEGVD氮化硅作为硅PN结太阳电池的单层抗反射膜,可使光电转换效率增加38％,短路电流增益平均达42％。利用PECVD氮化硅的Si/N元素成份比随工艺条件可变的特点,进行了多层非均质氮化硅抗反射膜的研究,在可见光谱范围内其表面反射率为4.5％。更多还原

【Abstract】 PECVD silicon nitride film as antireflection coating for the PN junction silicon solar cell has been introduced.After applying the PECVD silicon nitride AR coating,the average current gain of the solar cells attain to 42%,and the coversion efficiency of the solar cells increased by 38%Based on mastering depostion conditions,multilayer PECVD silicon nitride AR coatings have been also tried.It is obtained t that the average reflectance of the multilayer AR coatings at visible spectrum is 4.5%.更多还原