【摘要】 设计了以MIS接触作为源、漏的MNOS场效应晶体管,通过晶体管电特性的测量,考察了MIS/IL太阳电池减反射膜（LPCVD氮化硅）中由于电荷存贮效应引起正电荷密度增大时反型层参数(薄层电阻R_?,有效迁移率μ_eff)的变化。利用建立的模型用计算机分析了这些变化对电池输出特性的影响,结果表明电荷存贮效应可以有效地提高电池的转换效率。更多还原

【Abstract】 Fabricate a MNDS field effect.transistor with MIS contacts as source and.drain and with thin oxide and LPCVD silicon nitride as gate to study the properties ofinversion.layer of MIS/IL solar cell.Measurements of the characteristic of the MNOS transistor are made for deteriming the sheet resistance R and effective mobility μeff of the inversion layer to examine the variation of inversion layer parameters due to the enhancement of fixed positive charges QN caused by the charge stored effect in LPCVD silicon,nitride antireflecting layer.The results of numerical modeling for simulating the behaiviour of MIS/IL solar cell indicate that we may use the charge stored effect to raise the efficiency of ;MIS/IL solar cell without increasing the density of grating fin-.gers of MIS contacts更多还原