【摘要】 从击穿机理上论证了在重掺杂的情况下所产生的隧道击穿,是低压击穿,在低电阻率的单晶片上进行高浓度扩散,可以做低压稳压管。经多次实验证明,以上分析是正确的,并做出了5伏以下的稳压管,完全符合部颁标准。更多还原

【Abstract】 Abstract The paper describes a method of making low-Voltage stabilovolt diode. On punch-through theory, it has been proved that the tunneling re- sulting from high-doping is low-voltage punch-through. Therfore, it is able to fabricate low-voltage stabilovolt diode by high concentration diffusion on the silicon wafer of low resistivity. The stabilovolt diodes below 5 volts have been fabricated, and its properties accord with the demands.更多还原