【摘要】 本文用已知折射率的折射液体与半导体衬底上薄膜折射率相匹配的方法测得锗上等离子体阳极氧化膜的折射率为1.66,硅上氧等离子体氧化膜及热氧化SiO₂膜的折射率均为1.458。与激光椭偏仪的测量结果符合得很好。本文还用TP—83型椭偏仪的通用程序B算出砷化镓上等离子体氧化膜的折射率为1.80～1.90。更多还原

【Abstract】 by using the method of matching the known refractive index liquid with that of thintransparent film on semiconductor, the refractive index of oxygen--plasma--anodized film ongermanium determined is 1.66. The refractive indexes of both oxygen--plasma--anodized filmand thermally oxidized film on silicon are 1.458. These results coincide with those determ-ined by ellipsometry. In this paper, by using TP--83 type ellipsometry and its commonprogram B, the refractive index of oxygen--plasma--anodized film on gallium arsenidedetermined is 1.80-1.90.更多还原