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中子辐照含氢硅单晶低温Si—H吸收峰的研究
INVESTIGATION OF Si-H IR ABSORPTION PEAKS IN NEUTRON-IRRADIATED FZ-Si CRYSTAL CONTAINING HYDROGEN AT LOW TEMPERATURE
【摘要】 本文用傅里叶变换红外吸收低温(10K)光谱研究中子辐照氢气区熔硅单晶的Si-H吸收峰。发现比室温光谱有更多的与氢有关的吸收峰,观察到1980cm-1吸收峰的精细结构。确定1839cm-1与817cm-1吸收峰的相关性,观察到低温峰有比室温更明确的退火行为。对一些吸收峰的组态进行了讨论。
【Abstract】 The Si-H IR absorption peaks in the neutron-irradiated FZ-Si crystal containiing hydrogen are investigated using the low-temperature (10k) Fourier transform infrared absorption spectroscopy. More Hydrogen-related IR peaks than those in the case of room-temperature spectroscopy including the fine structure of the 1980 cm-1 peak and the correlation betwen the 1839 cm-1 and 817 cm-1 peaks have been found. The annealing behavior of above-mentioned low-temperature peaks is shown more definitely than that at room temperature. The configurations of these peaks are discussed.
- 【文献出处】 红外研究(A辑) , 编辑部邮箱 ,1987年05期
- 【被引频次】1
- 【下载频次】39