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光调制吸收测量HgCdTe载流子寿命及其干涉效应

THE MEASUREMENT OF CARRIER LIFETIME AND INTERFERENCE EFFECT IN HgCdTe USING OPTICAL MODULATION ABSORPTION

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【作者】 辛志君李炽冯文清俞国良

【Author】 XIN ZHIJUN, LO CHI, FENG WENQING, YU GUOLIANG(Kunming Institute of Physics)

【机构】 昆明物理研究所昆明物理研究所

【摘要】 用光调制红外吸收技术测量了Hg1-xCdxTe(0.23<x<0.3)晶片样品的光生少数载流子寿命及其面分布,观察到了干涉效应。实验采用楔形样品并加光阑的方法消除了干涉效应,取得了满意的效果,对干涉机理作出了解释。

【Abstract】 Photogenerated minority-carrier lifetime and its planar distribution in HgCdTe alloy samples (0.23<x<0.30) are measured by the optical modulation absorption. The interference effect is observed in the measurement. In order to eliminate this effect, the cuneiform samples are used and an aperture is added. The results are satisfactory. The mechanism of the interference phenomenon is explained.

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