【摘要】 由PN结带-带隧道电流理论出发推导出隧道电容的理论表达式,采用这一表达式对强简并窄禁带Hg_1-xCd_xTePN结的电容特性进行了拟合计算,计算结果在正偏压及反向小偏压范围内与实验结果拟合得较好。更多还原

【Abstract】 Slartlng from the band-band tunneling current theory of the PN junction, the theoretical model of tunneling capacitance is derived and, by using this model, the capacitance properties of highly degenerated narrow gap Hg_1-xCd_xTe PN junctions are calculated. The theoretical calculation is in agreement with the experimental results in the forward bias and small reverse bias regions.更多还原